TH58BYG2S3HBAI6

Manufacturer :

Toshiba Memory America, Inc.

Product Category :

Memory

Access Time :

25ns

Clock Frequency :

-

Memory Format :

Flash

Memory Interface :

Parallel

Memory Size :

4Gb (512M x 8)

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 85°C (TA)

Package / Case :

67-VFBGA

Packaging :

Tray

Part Status :

Active

Series :

Benand™

Supplier Device Package :

67-VFBGA (6.5x8)

Technology :

FLASH - NAND (SLC)

Voltage - Supply :

1.7 V ~ 1.95 V

Write Cycle Time - Word, Page :

25ns