HN1B01FU-Y(L,F,T)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

150mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA, 6V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Cut Tape (CT)

Part Status :

Discontinued at Digi-Key

Power - Max :

200mW

Series :

-

Supplier Device Package :

US6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50V