SI9926BDY-T1-E3

Manufacturer
Vishay Siliconix
Product Category
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 6.2A 8-SOIC
Manufacturer :
Vishay Siliconix
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
6.2A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Power - Max :
1.14W
Rds On (Max) @ Id, Vgs :
20 mOhm @ 8.2A, 4.5V
Series :
TrenchFET®
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Datasheets
SI9926BDY-T1-E3

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