SSM6J207FE,LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.4A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

137pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

251 mOhm @ 650mA, 10V

Series :

U-MOSII

Supplier Device Package :

ES6 (1.6x1.6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.6V @ 1mA