SCT2H12NYTB

Manufacturer :

Rohm Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

1700V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

184pF @ 800V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

44W (Tc)

Rds On (Max) @ Id, Vgs :

1.5 Ohm @ 1.1A, 18V

Series :

-

Supplier Device Package :

TO-268

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+22V, -6V

Vgs(th) (Max) @ Id :

4V @ 410µA