NVD5802NT4G-TB01

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

16.4A (Ta), 101A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta), 93.75W (Tc)

Rds On (Max) @ Id, Vgs :

4.4 mOhm @ 50A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA