NGTD13R120F2WP
- Manufacturer
- ON Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 1.2KV DIE
- Manufacturer :
- ON Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- -
- Current - Reverse Leakage @ Vr :
- 1µA @ 1200V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- Die
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Speed :
- -
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 1200V
- Voltage - Forward (Vf) (Max) @ If :
- 2.6V @ 25A
- Datasheets
- NGTD13R120F2WP
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Catalog related products
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Part | Manufacturer | Stock | Description |
---|---|---|---|
NGTD13R120F2SWK | ON Semiconductor | 20,763 | DIODE GEN PURP 1.2KV DIE |
NGTD13T65F2SWK | ON Semiconductor | 0 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD13T65F2WP | ON Semiconductor | 0 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD14T65F2SWK | ON Semiconductor | 27,717 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD14T65F2WP | ON Semiconductor | 25,828 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD15R65F2SWK | ON Semiconductor | 0 | DIODE GEN PURP 650V DIE |
NGTD15R65F2WP | ON Semiconductor | 0 | DIODE GEN PURP 650V DIE |
NGTD17R120F2SWK | ON Semiconductor | 10,718 | DIODE GEN PURP 1.2KV DIE |
NGTD17R120F2WP | ON Semiconductor | 25,077 | DIODE GEN PURP 1.2KV DIE |
NGTD17T65F2SWK | ON Semiconductor | 13,634 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD17T65F2WP | ON Semiconductor | 15,706 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD20T120F2SWK | ON Semiconductor | 24,649 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD20T120F2WP | ON Semiconductor | 17,609 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD21T65F2SWK | ON Semiconductor | 0 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD21T65F2WP | ON Semiconductor | 6,278 | IGBT TRENCH FIELD STOP 650V DIE |