1517-110M

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

9A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A, 5V

Frequency - Transition :

1.48GHz ~ 1.65GHz

Gain :

7.3dB ~ 8.6dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

55AW-1

Packaging :

Bulk

Part Status :

Active

Power - Max :

350W

Series :

-

Supplier Device Package :

55AW-1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

70V