PMDPB28UN,115
- Manufacturer
- NXP USA Inc.
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 20V 4.6A HUSON6
- Manufacturer :
- NXP USA Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 265pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UDFN Exposed Pad
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power - Max :
- 510mW
- Rds On (Max) @ Id, Vgs :
- 37 mOhm @ 4.6A, 4.5V
- Series :
- -
- Supplier Device Package :
- DFN2020-6
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- PMDPB28UN,115
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PMDPB28UN,115 | NXP USA Inc. | 0 | MOSFET 2N-CH 20V 4.6A HUSON6 |
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