IPN60R360P7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 400V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SOT-223-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

7W (Tc)

Rds On (Max) @ Id, Vgs :

360 mOhm @ 2.7A, 10V

Series :

CoolMOS™ P7

Supplier Device Package :

PG-SOT223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 140µA