APT1001R1BN

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.5A (Tc)

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

310W (Tc)

Rds On (Max) @ Id, Vgs :

1.1 Ohm @ 5.25A, 10V

Series :

POWER MOS IV®

Supplier Device Package :

TO-247AD

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA